Phase change memory stack with treated sidewalls

ABSTRACT

Memory devices and methods for fabricating memory devices have been disclosed. One such memory device includes a first electrode material formed on a word line material. A selector device material is formed on the first electrode material. A second electrode material is formed on the selector device material. A phase change material is formed on the second electrode material. A third electrode material is formed on the phase change material. An adhesion species is plasma doped into sidewalls of the memory stack and a liner material is formed on the sidewalls of the memory stack. The adhesion species intermixes with an element of the memory stack and the sidewall liner to terminate unsatisfied atomic bonds of the element and the sidewall liner.

PRIORITY APPLICATION

This application is a divisional of U.S. application Ser. No.15/613,823, filed Jun. 5, 2017, which is a continuation of U.S.application Ser. No. 15/063,179, filed Mar. 7, 2016, now issued as U.S.Pat. No. 9,673,256, which is a divisional of U.S. application Ser. No.14/266,365, filed Apr. 30, 2014, now issued as U.S. Pat. No. 9,281,471,all of which are incorporated herein by reference in their entirety.

BACKGROUND

Memory devices are typically provided as internal, semiconductor,integrated circuits in apparatuses such as computers or other electronicdevices. There are many different types of memory includingrandom-access memory (RAM), read only memory (ROM), dynamic randomaccess memory (DRAM), synchronous dynamic random access memory (SDRAM),and non-volatile (e.g., phase change memory, flash) memory.

Non-volatile memories are important elements of integrated circuits dueto their ability to maintain data absent a power supply. Phase changematerials have been investigated for use in non-volatile memory cells.Phase change memory (PCM) elements include phase change materials, suchas chalcogenide alloys, that are capable of stably transitioning betweenamorphous and crystalline phases. Each phase exhibits a particularresistance state and the resistance states distinguish the logic valuesof the memory element. Specifically, an amorphous state exhibits arelatively high resistance and a crystalline state exhibits a relativelylow resistance. One of different logic levels (e.g., logic 1 or logic 0)can be assigned to each of these states.

Thus, there are general needs to improve PCM devices.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 illustrates a cross-sectional view of a typical phase changememory stack.

FIGS. 2-7 illustrate an embodiment of a process flow to fabricate aphase change memory stack having treated sidewalls.

FIG. 8 illustrates a detailed cross-sectional view of an embodiment ofintermixing of an implanted adhesion species on memory stack sidewalls.

FIG. 9 illustrates a block diagram of a memory system in accordance withthe embodiments of FIGS. 2-8.

DETAILED DESCRIPTION

As described subsequently, a method for fabricating a memory stack(e.g., memory device) with treated sidewalls can increase the adhesionof dielectric passivation material to the electrodes. This can reduceinter-diffusion between the electrodes and adjacent materials in thememory stack.

FIG. 1 illustrates a typical memory cell stack for a PCM. Carbon can beused as top 101, middle 102, and bottom 103 electrodes for the memorycell stack. Carbon is chemically inert and does not react easily withthe phase change material 110 or the selector device material 111. Thisinert chemistry can also lead to poor adhesion of sidewalls to thecarbon electrodes. As a result, it can be possible for the sidewallmaterial 120, 121 to inter-diffuse 130, 131 between the selector devicematerial 111 and the phase change material 110. This can occur at highertemperatures. The inter-diffusion can cause reliability issues, degradeleakage current, and affect threshold voltage stability.

FIGS. 2-7 illustrate various steps in fabricating a memory stack (e.g.,PCM) in addition to treating the sidewalls of the memory stack with anadhesion species. These fabrication steps are for purposes ofillustration only as the different elements of the stack can be formedby different processes.

FIG. 2 illustrates an embodiment of a blanket deposition of the initialmemory stack material 200. The memory stack can include a word linematerial (e.g., tungsten (W)) 201. A first electrode material 202 (e.g.,carbon) can be formed on the word line material 201. A selector devicematerial 203 may be formed on the first electrode material 202.

The selector device material 203 (SD) may include Selenium (Se), Arsenic(As), Germanium (Ge), Tin (Sn), Tellurium (Te), Silicon (Si), Lead (Pb),Carbon (C), or Bismuth (Bi) as well as other materials. Otherembodiments can include selector device material 203 comprising one ormore of these elements as well as one or more of these elements combinedwith other elements.

A second electrode material 204 (e.g., carbon) can be formed on theselector device material 203. A phase change material 205 can be formedon the second electrode material 204.

The phase change material 205 (PM) can include chalcogenide elementssuch as Germanium (Ge), Antimony (Sb), Tellurium (Te), Indium (In) aswell as other chalcogenide elements, combinations of these elements, orcombinations of these elements with other elements. The phase changematerial 205 can additionally include Aluminum (Al), Gallium (Ga), Tin(Sn), Bismuth (Bi), Sulphur (S), Oxygen (O), Gold (Au), Palladium (Pd),Copper (Cu), Cobalt (Co), Silver (Ag), or Platinum (Pt) as well as otherelements. Additional embodiments can combine these elements with thechalcogenide elements.

A third electrode material 206 (e.g., carbon) can be formed on the phasechange material 205. Forming the third electrode material 206, as wellas the other materials 201-205 of the memory stack, can be done with ablanket deposition method or some other deposition method.

After the initial memory stack material 200 has been formed, an etchprocess (e.g., dry etch) can be performed on the stack material 200 tocreate trenches 301-304 as illustrated in FIG. 3. FIG. 3 illustratesthat the stack material 200 has been divided by the plurality oftrenches 301-304 into a plurality of memory stacks 311-315, each stackcomprising the architecture illustrated in FIG. 2. In some embodiments(not shown), a plurality of trenches is formed in the stack material toless than its full height.

In another embodiment, the stack material 200 can be dry etchedpatterned in both x and y directions. Thus, subsequent sidewall linerscan be added on four sidewalls, as illustrated in FIG. 7.

FIG. 4 illustrates the treatment of the sidewalls or sidewall liners (asseen in FIG. 5) of particular ones of the stacks 311-313 as formed inFIG. 3. This treatment enhances the dielectric liner adhesion to theelectrode surfaces. In an embodiment, a plasma immersion technique(e.g., plasma doping (PLAD)) can be used to implant an adhesion species401-403 in either the stack sidewalls or the sidewall liners.

In an embodiment, the dielectric sidewalls or sidewall liners (as seenin FIG. 5) can be treated with an adhesion species 401-403 (e.g., boron)by exposing the sidewalls to the adhesion species mixed in a carriergas. For example, boron can be mixed with a flourine carrier gas suchthat the sidewalls or the sidewall liners are exposed to the borontriflouride (BF₃) during the plasma doping, as illustrated in greaterdetail with reference to FIGS. 4 and 8. Boron has properties that arebetween metals and non-metals. Chemically it is more related to siliconthan to aluminum, gallium, indium, or thallium. Fluorine iselectro-negative and reactive of all elements and reacts with mostorganic and inorganic substances.

Relatively low energy plasma immersion implant can have advantages ifused in this process. For example, conformal doping can be used in theprocess in order to achieve a tunable implant/deposition operationregime and a shallow profile. The ion bombardment nature of an implantprocess can enhance an adhesion-friendly species (e.g., boron) byintermixing with the electrode material. For example, the implantedadhesion species can improve adhesion by species intermixing andterminating unsatisfied atomic bonds (e.g., carbon bonds). Otheradhesion species 401-403 that have substantially similar properties canalso be used. To form the PCM cells, electrically insulated pillars areformed (e.g., by dry etching) in the bit line direction while the memorystacks are formed in the word line direction.

FIG. 5 illustrates an embodiment for forming the sidewall liners 500-508on the sidewalls of the stacks 311-315. The process to form the sidewallliners 500-508 can include any dielectric material that can be depositedby any deposition process. For example, the sidewall deposition caninclude a Plasma Enhanced Atomic Layer Deposition (PEALD) process usinga dielectric material such as AlSiO_(x). Any dielectric material can beused during the sidewall deposition.

FIG. 6 illustrates an embodiment for forming a dielectric fill material601-604 between adjacent memory stacks. The dielectric fill material601-604 can electrically isolate each of the memory stacks. Thedielectric fill material 601-604 can be the same material as thesidewall liners 500-508 or a different dielectric material.

FIG. 7 illustrates an embodiment for forming additional decks of memorystacks. For example, FIG. 7 shows two memory stacks 701, 702 coupledtogether at a common bit line 703. The sidewalls or the sidewall linertreatment described previously with reference to FIG. 4 and below withreference to FIG. 8 may be repeated for the memory stacks at each of thedecks. Other embodiments can have additional decks of memory stacks 701,702.

FIG. 8 illustrates a detailed cross-sectional view of an embodiment ofintermixing of an implanted adhesion species on memory stack sidewalls.The implanted adhesion species has been shown and described as beingimplanted into the sidewalls of the memory stacks but other embodimentsmay implant the adhesion species into the sidewall liners.

FIG. 8 shows an enlarged detail view 820 of the atomic level intermixingboundary 810 between the second electrode material 803, the adhesionspecies, and the memory stack liner 801. This diagram shows that theadhesion species (e.g., boron) intermixes with the material of theelectrode (e.g., carbon) and the liner 801 to cause enhanced adhesion ofthe liner 801 to the electrode material 803. The intermixing can beaccomplished by the adhesion species terminating unsatisfied atomicbonds of both the electrode material 803 and the liner 801.

The represented sequence of layers is for purposes of illustration only.Other embodiments can use other sequences. For example, the relativeposition of the PM and select material (SD) may be exchanged. Also, therelative positions of word line material and bit line material may bechanged (e.g., having bit lines at the bottom of the first deck and wordlines at the top of the first deck and possibly shared with a seconddeck stack.

FIG. 9 illustrates a block diagram of a memory system that include amemory device 901 that can use the memory stacks with treated sidewallsof FIGS. 2-8. A controller 900 may be used to control operations of thesystem. The memory device 901, coupled to the controller 900, mayinclude a memory array comprising memory cell stacks as described abovewith reference to FIGS. 2-8.

The controller 900 may be coupled to the memory device 901 over control,data, and address buses. In another embodiment, the address and databuses may share a common input/output (I/O) bus. The controller 900 canbe part of the same integrated circuit as the memory device 901 or asseparate integrated circuits.

As used herein, an apparatus may refer to, for example, circuitry, anintegrated circuit die, a memory device, a memory array, or a systemincluding such a circuit, die, device or array.

CONCLUSION

One or more embodiments of the method for memory stack sidewalltreatment can result in a memory device with memory stacks havingenhanced adhesion to the sidewall liners. For example, an adhesionspecies (e.g., boron) can intermix with particular materials of thememory stack to create better adhesion and, thus, reduced sidewallmaterial inter-diffusion. The sidewalls can be treated with the adhesionspecies using a BF₃ PLAD sidewall treatment.

Although specific embodiments have been illustrated and describedherein, it will be appreciated by those of ordinary skill in the artthat any arrangement that is calculated to achieve the same purpose maybe substituted for the specific embodiments shown. Many adaptations willbe apparent to those of ordinary skill in the art. Accordingly, thisapplication is intended to cover any adaptations or variations.

What is claimed is:
 1. A method for fabricating a memory devicecomprising: forming multiple memory stacks, including, forming first andsecond carbon electrodes in vertically spaced relation to one anotherand over a conductive line material; forming a chalcogenide-containingmaterial between the first and second carbon electrodes; patterning andetching materials including the first and second carbon electrodes andthe chalcogenide material to define multiple memory stacks; implantingan adhesion species into the sidewalls of the first and second carbonelectrodes; and forming a liner material on the sidewalls of each memorystack wherein the adhesion species intermixes the carbon of the firstand second carbon electrodes and the sidewall liner.
 2. The method ofclaim 1, further comprising: forming a third carbon electrode invertically spaced relation to the first and second carbon electrodes,and on the opposite side of the second carbon electrode from the firstcarbon electrode; and forming a selector device material between thesecond and third carbon electrodes.
 3. The method of claim 2 furthercomprising: implanting the adhesion species into the sidewalls of thethird carbon electrode as part of the same operation of implanting theadhesion species into the sidewalls of the first and second carbonelectrodes; and wherein the adhesion species intermixes with the carbonof the third carbon electrode and the sidewall liner material.
 4. Themethod of claim 1, wherein the chalcogenide-containing materialcomprises one or more of Germanium (Ge), Antimony (Sb), Tellurium (Te),and Indium (In).
 5. The method of claim 4, wherein thechalcogenide-containing material further comprises one or more ofAluminum (Al), Gallium (Ga), Tin (Sn), Bismuth (Bi), Sulphur (S), Oxygen(O), Gold (Au), Palladium (Pd), Copper (Cu), Cobalt (Co), Silver (Ag),and Platinum (Pt).
 6. The method of claim 1, wherein the adhesionspecies acts to terminate unsatisfied atomic bonds of the element andthe sidewall liner.
 7. The method of claim 1, wherein implanting theadhesion species into the sidewalls of the first and second carbonelectrodes comprises implanting boron using a plasma doping process toperform a conformal doping process.
 8. The method of claim 1, whereinforming the sidewall liner material comprises forming a dielectricmaterial on the sidewalls of each memory stack.
 9. A method forfabricating a memory device comprising: forming multiple memory stacks,including, forming first and second carbon electrodes in verticallyspaced relation to one another and over a conductive line material;forming a chalcogenide-containing material between the first and secondcarbon electrodes; patterning and etching materials including the firstand second carbon electrodes and the chalcogenide material to definemultiple memory stacks; forming a liner material on the sidewalls ofeach memory stack; and implanting an adhesion species into the sidewallliner material, wherein the adhesion species intermixes with thesidewall liner material and with the carbon of the first and secondcarbon electrodes.
 10. The method of claim 9, wherein the sidewall linermaterial comprises a dielectric material.
 11. The method of claim 10,further comprising: forming a third carbon electrode in verticallyspaced relation to the first and second carbon electrodes, and on theopposite side of the second carbon electrode from the first carbonelectrode; and wherein the adhesion species further intermixes with thecarbon of the third carbon electrode.
 12. The method of claim 11,further comprising forming a selector device material between the secondand third carbon electrodes.
 13. The method of claim 9, wherein thechalcogenide-containing material comprises one or more of Germanium(Ge), Antimony (Sb), Tellurium (Te), and Indium (In).
 14. The method ofclaim 13, wherein the chalcogenide-containing material further comprisesone or more of Aluminum (Al), Gallium (Ga), Tin (Sn), Bismuth (Bi),Sulphur (S), Oxygen (O), Gold (Au), Palladium (Pd), Copper (Cu), Cobalt(Co), Silver (Ag), and Platinum (Pt).
 15. The method of claim 9, whereinthe adhesion species acts to terminate unsatisfied atom bonds of thecarbon electrodes.
 16. The method of claim 9, wherein the adhesionspecies comprises boron.
 17. The method of claim 16, wherein implantingthe boron-comprising adhesion species comprises using a plasma dopingprocess to perform a conformal doping process.